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NIF9N05CL, NIF9N05ACL
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwis e noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
275
465
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
V GS = 4.5 V, V DD = 40 V,
I D = 2.6 A, R D = 15.4 W
V GS = 4.5 V, V DD = 40 V,
I D = 1.0 A, R D = 40 W
V GS = 10 V, V DD = 15 V,
I D = 2.6 A, R D = 5.8 W
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
1418
780
1120
242
1165
906
1273
107
290
1540
1000
2400
1320
1900
ns
ns
Gate Charge
Gate Charge
V GS = 4.5 V, V DS = 40 V,
I D = 2.6 A (Note 3)
V GS = 4.5 V, V DS = 15 V,
I D = 1.5 A (Note 3)
Q T
Q 1
Q 2
Q T
Q 1
Q 2
4.5
0.9
2.6
3.9
1.0
1.7
7.0
nC
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
I S = 2.6 A, V GS = 0 V (Note 3)
I S = 2.6 A, V GS = 0 V, T J = 125 ° C
V SD
t rr
0.81
0.66
730
1.5
V
ns
I S = 1.5 A, V GS = 0 V,
dI s /dt = 100 A/ m s (Note 3)
t a
t b
200
530
Reverse Recovery Stored Charge
Q RR
6.3
m C
ESD CHARACTERISTICS
Electro ? Static Discharge Capability
Human Body Model (HBM)
ESD
5000
V
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
500
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